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ABSTRACT:
Recent experiments in semiconductor nanostructures have been
suggested a possible manipulation of nuclear spins based on the
electron-nuclear hyperfine interaction [1,2]. We present a
calculation of nuclear and electronic spin decoherence times due
to the interaction between electron and nuclear spins for low
dimensional semiconductor systems. Both electronic and nuclear
spin decoherence times are analyzed as function of temperature and
electronic and nuclear densities. The obtained electronic spin
relaxation time is temperature independent suggesting that the
relaxation mechanism based on the hyperfine interaction could
be the controlling one in the low temperature regime.
[1] G. Salis et al, PRL 86, 2677 (2001).
[2] R.K. Kawakami et al, Science 294, 131 (2001).
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